ASFETs for DC motor control – 50/55V ASFETs are designed to meet the needs of 36 V motors:
- Nexperia’s Superjunction technology provides an enhanced Safe Operating Area (SOA) to withstand power dissipation due to short-circuit faults
- ID(max), enabling maximum torque from the motor and reliably managing high load and stall current conditions
- Potential UIS (unclamped inductive spiking) energy dissipation 20% lower than a comparable 60 V MOSFETs
- Nexperia’s low RDS(on) characteristics deliver higher efficiencies, ensuring longer battery life
- As with all motor applications, there is a level of system vibration that cannot be dampened. LFPAK brings a unique level of board level reliability and ruggedness.
- Devices are offered in logic level allowing them to be switched directly from a 5 V gate drive
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50 - 55 VDS for 36 V motors
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產(chǎn)品
| 型號(hào) | 描述 | 狀態(tài) | 快速訪問(wèn) |
|---|---|---|---|
| PSMN1R2-55SLH | N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 | Production | |
| PSMN1R5-50YLH | N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
| PSMN2R0-55YLH | N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
| PSMNR90-50SLH | N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 | Production |
Visit our documentation center for all documentation
Application note (11) |
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|---|---|---|---|
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| AN11160.pdf | Designing RC Snubbers | Application note | 2024-10-21 |
| AN10273.pdf | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| AN11158_ZH.pdf | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN90019.pdf | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11599.pdf | Using power MOSFETs in parallel | Application note | 2016-07-13 |
Marcom graphics (1) |
|||
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
| RS3301_50_55V-scr.jpg | hedge trimmer image | Marcom graphics | 2021-06-16 |
Selection guide (1) |
|||
| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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