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Low voltage e-mode GaN FETs
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產(chǎn)品
| 型號 | 描述 | 狀態(tài) | 快速訪問 |
|---|---|---|---|
| GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5?mm?x?2.13?mm Wafer Level Chip-Scale Package (WLCSP) | Production | |
| GAN7R0-150LBE | 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2?mm?x?3.2?mm?x?0.774?mm Land Grid Array (LGA) package | Production | |
| GANE1R8-100QBA | 100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Development | |
| GANE2R7-100CBA | 100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP) | Development | |
| GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Production | |
| GANE7R0-100CBA | 100 V, 7.0 mOhm Gallium Nitride (GaN) FET in a 2.5 mm x 1.5 mm Wafer Level Chip-Scale Package (WLCSP) | Development |
Visit our documentation center for all documentation
Application note (1) |
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|---|---|---|---|
| 文件名稱 | 標題 | 類型 | 日期 |
| AN90021.pdf | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
Leaflet (2) |
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| 文件名稱 | 標題 | 類型 | 日期 |
| nexperia_document_leaflet_GaNFETs_2024-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2024-07-31 |
| nexperia_document_leaflet_GaNFETs_2024.pdf | Power GaN FETs | Leaflet | 2024-07-24 |
Marcom graphics (1) |
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| 文件名稱 | 標題 | 類型 | 日期 |
| WLCSP8_SOT8072-combi_mk.png | wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm | Marcom graphics | 2023-04-20 |
White paper (3) |
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| 文件名稱 | 標題 | 類型 | 日期 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf | 白皮書: 功率GaN技術(shù)： 高效功率轉(zhuǎn)換的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion.pdf | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |