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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

Ultra Wide Band (UWB) key fob

Ultra Wide Band (UWB) key fobs are revolutionizing the way we interact with our vehicles and other electronic devices. As well as providing a fail-safe solution for opening doors, they offer precise location tracking and enhanced security features, making them significantly more advanced than traditional keyless entry systems. However, the advanced functionalities of UWB key fobs come with increased power consumption, necessitating the need for effective battery life boosting technology. This helps optimize power management within the key fob and overcome the challenges of operating under burst load conditions, ensuring longer battery life and reliable performance.

Block diagram

Design considerations

  • Depending on power requirements, Nexperia offers a choice of 5.5 V or 11 V maximim storage capacitance voltage, delivering either 150 or 200 mA max load current
  • Designers can choose between an SPI and I²C controlled battery life boost ICs

Intelligent battery life booster IC makes powering the IoT leaner and greener

As Internet-of-Things (IoT) technology reduces form factor and power consumption, many new battery-powered applications have become possible. While s???leep mode is not an issue for lithium primary batteries, infrequent periodic short bursts of activity (pulsed mode) is problematic. Intelligent battery booster IC can extend the life of a typical Lithium coin cell battery and increase the peak output current available to a pulse load. 

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