可訂購部件
| 型號(hào) | 可訂購的器件編號(hào) | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | 934665873027 | NBD2-02 | 訂單產(chǎn)品 |
| PSC1065B1 | PSC1065B1Z | 934665873331 | NBD2-02 | 訂單產(chǎn)品 |
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Click here for more informationPSC1065B1
650 V, 10 A SiC Schottky diode in bare die
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Qc x VF)
High IFSM capability
High power density
Reduced system costs
System miniaturization
Reduced EMI
Applications
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | VRRM [max] (V) | VF [max] (V) | @IF [max] @140 C (A) | IR [max] (μA) | @VR (V) | IFSM [max] (A) | Nr of functions | Configuration | Ptot [max] (W) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSC1065B1 | NBD2-02 | Bare die | 1.45 x 1.45 x 0.11 | 650 | 1.8 | 10 | 60 | 650 | 440 | single | single | 65 | N |
封裝
| 型號(hào) | 可訂購的器件編號(hào)，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ (934665873027) |
Active | PSC1065B1 |
Bare die (NBD2-02) |
暫無信息 | 暫無信息 | |
| PSC1065B1Z (934665873331) |
Active | PSC1065B1 | 暫無信息 |
環(huán)境信息
| 型號(hào) | 可訂購的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | PSC1065B1 |
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| PSC1065B1 | PSC1065B1Z | PSC1065B1 |
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文檔 (1)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PSC1065B1 | 650 V, 10 A SiC Schottky diode in bare die | Data sheet | 2025-01-09 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
No documents available
訂購、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PSC1065B1 | PSC1065B1AZ | 934665873027 | Active | 暫無信息 | 8,000 | 訂單產(chǎn)品 |
| PSC1065B1 | PSC1065B1Z | 934665873331 | Active | 暫無信息 | 8,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過我們的銷售機(jī)構(gòu)訂購樣品。
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSC1065B1
650 V, 10 A SiC Schottky diode in bare die
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