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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK7505-30A

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low conduction losses due to low on-state resistance

Applications

  • Automotive and general purpose power switching

參數(shù)類(lèi)型

型號(hào) Package version Package name Product status Release date
BUK7505-30A SOT78A TO-220AB End of life 2010-06-30

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BUK7505-30A BUK7505-30A,127
(934055405127)
Obsolete BUK7505 30A P**XXYY AZ Batch No. SOT78A
TO-220AB
(SOT78A)
SOT78A 暫無(wú)信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BUK7505-30A BUK7505-30A,127 BUK7505-30A rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78A plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.5 mm x 10 mm x 4.3 mm body Package information 2020-04-21

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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