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Click here for more informationBUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.
Features and benefits
- AEC Q101 compliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6E3R2-55C | SOT226 | I2PAK | End of life | N | 1 | 55 | 3.2 | 4.2 | 4.8 | 175 | 120 | 75 | 258 | 306 | 176 | 2.3 | Y | 11430 | 1100 | 2010-10-12 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK6E3R2-55C | BUK6E3R2-55C,127 (934064473127) |
Obsolete | BUK6E3R2 55C P**XXYY AZ Batch No |
I2PAK (SOT226) |
SOT226 | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK6E3R2-55C | BUK6E3R2-55C,127 | BUK6E3R2-55C |
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Series
文檔 (17)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6E3R2-55C | N-channel TrenchMOS intermediate level FET | Data sheet | 2017-05-04 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT226 | plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| BUK6E3R2-55C_RC_Thermal_Model | BUK6E3R2-55C Thermal design model | Thermal design | 2021-01-18 |
| BUK6E3R2-55C | BUK6E3R2-55C Thermal model | Thermal model | 2010-09-24 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK6E3R2-55C_RC_Thermal_Model | BUK6E3R2-55C Thermal design model | Thermal design | 2021-01-18 |
| BUK6E3R2-55C | BUK6E3R2-55C Thermal model | Thermal model | 2010-09-24 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BUK6E3R2-55C
N-channel TrenchMOS intermediate level FET
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