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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

NGD4300GC

4 A peak high-performance dual MOSFET gate driver

The NGD4300 is a high-performance gate driver designed to drive both high-side and low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have an independent undervoltage lockout (UVLO) circuit which disables the output driver when the driver supply is below its threshold level. The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%). The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The 4 A peak source and sink current capability of the driver’s output stage guarantees short rise- and fall-times even at high loads.

The NGD4300 is offered in the SO8, HWSON8 and HSO8 packages, and operates over an extended ??40 °C to +125 °C temperature range.

Features and benefits

  • Input signals complying with both TTL and CMOS signaling of 2.5 V, 3.3 V, and 5 V
  • Output signals with excellent propagation delay matching of 1 ns typical
  • Fast propagation times of 13 ns typical
  • Switching frequency up to 1 MHz
  • 4 A peak source and 5 A sink current capability of the gate driver output stage
  • 4 ns rise and 3.5 ns fall times with 1000 pF loads
  • Bootstrap supply voltage up to 120 V using an integrated bootstrap diode
  • 8 V to 17 V VDD operation range
  • Undervoltage protection for both low-side and high-side supplies
  • Low-power consumption (IDDO = 0.6 mA typical)
  • 8 pin SO8, HWSON8 and HSO8 packages
  • ESD protection:
    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +125 °C

Applications

  • Current-fed, push-pull converters

  • Two-switch forward power converters

  • Class-D audio amplifiers

  • Solid-state motor drives

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
NGD4300GC NGD4300GCJ
(935691536118)
Active NGD4300 SOT8047-1
HWSON
(SOT8047-1)
SOT8047-1 SOT8047-1_118

Boards

Part number Description Type Quick links Shop link
描述
NGD4300 application board is designed for evaluating NGD4300, which is a 120V High-side and Low-side gate driver with 4A source and 5A sink peak current capability. This application board can be used to evaluate the behavior and performance of the gate driver in a buck converter environment.
類型
Demo board
Quick links
Shop link

環(huán)境信息

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
NGD4300GC NGD4300GCJ NGD4300GC rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (6)

文件名稱 標(biāo)題 類型 日期
NGD4300 4 A peak high-performance dual MOSFET gate driver Data sheet 2024-11-11
NGD4300_half_bridge_gate_driver_leaflet Driving Power with Efficiency: The NGD4300 Half-bridge Gate Driver Leaflet 2024-11-14
nexperia_leaflet_NGD4300_half_bridge_gate_driver_CN 助力高效率電源轉(zhuǎn)換: NGD4300半橋柵極驅(qū)動器 Leaflet 2025-01-09
SOT8047-1 plastic thermal enhanced very very thin small outline package; no leads;8 terminals; 0.8 mm pitch; 4 x 4 x 0.75 mm body Package information 2024-08-21
SOT8047-1_118 HWSON8; Reel pack for SMD, 13"; Q1/T1 product orientation Packing information 2024-09-19
UM90032 NGD4300 gate driver evaluation board User manual 2024-09-16

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

No documents available

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
NGD4300GC NGD4300GCJ 935691536118 Active SOT8047-1_118 4,500 訂單產(chǎn)品

樣品

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如果您沒有 Nexperia 的直接賬戶,我們的全球和地區(qū)分銷商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
NGD4300GC NGD4300GCJ 935691536118 SOT8047-1 訂單產(chǎn)品
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