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Click here for more information74AUP2G32GD
Low-power dual 2-input OR gate
The 74AUP2G32 is a dual 2-input OR gate. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
文檔 (5)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| 74AUP2G32 | Low-power dual 2-input OR gate | Data sheet | 2024-08-12 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| aup2g32 | aup2g32 IBIS model | IBIS model | 2013-04-07 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
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模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| aup2g32 | aup2g32 IBIS model | IBIS model | 2013-04-07 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.