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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AHC2G00GD

Dual 2-input NAND gate

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.

The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.

The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Symmetrical output impedance

  • High noise immunity

  • Low power dissipation

  • Balanced propagation delays

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

文檔 (4)

文件名稱 標(biāo)題 類型 日期
74AHC_AHCT2G00 Dual 2-input NAND gate Data sheet 2023-08-31
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
ahc2g00 ahc2g00 IBIS model IBIS model 2013-04-08

支持

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模型

文件名稱 標(biāo)題 類型 日期
ahc2g00 ahc2g00 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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