亚洲成人免费一区二区三区-国产午夜精品美女视频-国产熟女一区二区免费视频-日韩人妻精品久久免费

雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AUP1G97GF

Low-power configurable multiple function gate

The 74AUP1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards:
    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP1G97GF 74AUP1G97GF,132
(935281335132)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AUP1G97GF 74AUP1G97GF,132 74AUP1G97GF rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
74AUP1G97 Low-power configurable multiple function gate Data sheet 2023-07-24
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11052 Pin FMEA for AUP family Application note 2019-01-09
aup1g97 aup1g97 IBIS model IBIS model 2015-09-06
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
aup1g97 aup1g97 IBIS model IBIS model 2015-09-06

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

麻栗坡县| 新昌县| 蕲春县| 河东区| 荥阳市| 甘孜县| 威远县| 西华县| 浦江县| 安图县| 清苑县| 南郑县| 简阳市| 修水县| 高尔夫| 龙陵县| 长沙市| 锡林浩特市| 新闻| 台北县| 北海市| 溆浦县| 嘉荫县| 且末县| 公安县| 康保县| 永福县| 正蓝旗| 浦县| 呼和浩特市| 修文县| 新民市| 忻城县| 孙吴县| 象州县| 临猗县| 龙川县| 宝清县| 苍溪县| 扎兰屯市| 南澳县|