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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVT16244BBX

3.3 V 16-bit buffer/driver; 3-state

The 74LVT16244B; 74LVTH16244B is a 16-bit buffer/line driver with 3-state outputs. The device can be used as four 4-bit buffers, two 8-bit buffers or one 16-bit buffer. The device features four output enables (1OE, 2OE, 3OE and 4OE), each controlling four of the 3-state outputs. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. Bus hold data inputs eliminate the need for external pull-up resistors to define unused inputs

此產(chǎn)品已停產(chǎn)

Features and benefits

  • 16-bit bus interface

  • 3-state buffers

  • Wide supply voltage range from 2.7 to 3.6 V

  • Overvoltage tolerant inputs to 5.5 V

  • BiCMOS high speed and output drive

  • Output capability: +64 mA and -32 mA

  • Direct interface with TTL levels

  • Bus hold data inputs eliminate need for external pull-up resistors to hold unused inputs

  • Power-up 3-state

  • Live insertion and extraction permitted

  • No bus current loading when output is tied to 5 V bus

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 500 mA per JESD 78 Class II Level B

  • Complies with JEDEC standard JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to 85 °C

參數(shù)類型

型號 Package name
74LVT16244BBX HXQFN60U

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVT16244BBX 74LVT16244BBX,518
(935295876518)
Obsolete LVT16244B Standard Procedure Standard Procedure no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LVT16244BBX 74LVT16244BBX,518 74LVT16244BBX rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
74LVT_LVTH16244B 3.3 V 16-bit buffer/driver; 3-state Data sheet 2024-07-08
lvt16244b lvt16244b IBIS model IBIS model 2013-04-09

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
lvt16244b lvt16244b IBIS model IBIS model 2013-04-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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