可訂購部件
| 型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經(jīng)銷商處購買 |
|---|---|---|---|---|
| PBSS4230PAN | PBSS4230PAN,115 | 934066883115 | SOT1118 | 訂單產(chǎn)品 |
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Click here for more informationPBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.
Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | Product status | channel type (e) | Nr of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | RCEsat@IC [max] (mΩ) | hFE [min] | fT [typ] (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4230PAN | SOT1118 | DFN2020-6 | 2 x 2 x 0.65 | Production | NPN | 2 | 1040.0 | 30.0 | 2.0 | 290.0 | 145.0 | 250.0 | 120.0 |
封裝
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4230PAN | PBSS4230PAN,115 (934066883115) |
Active | 2G |
DFN2020-6 (SOT1118) |
SOT1118 |
REFLOW_BG-BD-1
|
SOT1118_115 |
Series
支持
如果您需要設計/技術(shù)支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4230PAN | PBSS4230PAN SPICE model | SPICE model | 2024-08-27 |
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
訂購、定價與供貨
| 型號 | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購買 |
|---|---|---|---|---|---|---|
| PBSS4230PAN | PBSS4230PAN,115 | 934066883115 | Active | SOT1118_115 | 3,000 | 訂單產(chǎn)品 |
樣品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
從安世半導體購買
| SKU | 庫存* | MOQ | 單位價格 | 數(shù)量 |
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