亚洲成人免费一区二区三区-国产午夜精品美女视频-国产熟女一区二区免费视频-日韩人妻精品久久免费

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AUP3G17GM

Low-power triple Schmitt trigger

The 74AUP3G17 provides three Schmitt trigger buffers. It is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

The inputs switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • High noise immunity

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP3G17GM 74AUP3G17GM,125
(935281444125)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AUP3G17GM 74AUP3G17GM,125 74AUP3G17GM rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (3)

文件名稱 標題 類型 日期
AN11052 Pin FMEA for AUP family Application note 2019-01-09
aup3g17 74AUP3G17 IBIS model IBIS model 2015-12-14
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12

支持

如果您需要設計/技術(shù)支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
aup3g17 74AUP3G17 IBIS model IBIS model 2015-12-14

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

高邮市| 博客| 什邡市| 万宁市| 集安市| 三门峡市| 巴彦淖尔市| 丰都县| 广安市| 蒲城县| 五家渠市| 多伦县| 黎川县| 孟州市| 谷城县| 邵武市| 浦城县| 伊春市| 东城区| 疏勒县| 五华县| 遵义县| 巩义市| 江西省| 故城县| 白朗县| 阳东县| 桑植县| 苏州市| 永靖县| 博白县| 仙桃市| 东至县| 特克斯县| 曲松县| 三门峡市| 通化市| 万山特区| 福清市| 泾阳县| 浦江县|