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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

XC7WH14GD

Triple inverting Schmitt trigger

The XC7WH14 is a high-speed Si-gate CMOS device. This device provides three inverting buffers with Schmitt trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Symmetrical output impedance

  • High noise immunity

  • Low power dissipation

  • Balanced propagation delays

  • CMOS input levels

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Applications

  • Wave and pulse shaper for highly noisy environment

  • Astable multivibrator

  • Monostable multivibrator

參數(shù)類型

型號 Package name
XC7WH14GD XSON8

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
XC7WH14GD XC7WH14GD,125
(935289932125)
Withdrawn / End-of-life f14 SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
XC7WH14GD XC7WH14GD,125 XC7WH14GD rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (3)

文件名稱 標(biāo)題 類型 日期
XC7WH14 Triple inverting Schmitt trigger Data sheet 2024-01-03
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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