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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

PXP9R1-30QL

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic level compatible

  • Trench MOSFET technology

  • MLPAK33 package (3.3 x 3.3 mm footprint)

Applications

  • High-side load switch

  • Battery management

  • DC-to-DC conversion

  • Switching circuits

參數(shù)類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PXP9R1-30QL SOT8002-1 MLPAK33 Production P 1 -30 9.1 12.8 150 -57.2 11.1 29 57 4.8 9 -1.4 N 2860 320 2021-01-04

文檔 (6)

文件名稱 標題 類型 日期
AN11119 Medium power small-signal MOSFETs in DC-to-DC conversion Application note 2013-05-07
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN90017 Load switches for mobile and computing applications Application note 2020-09-02
SOT8002_1 3D model for products with SOT8002-1 package Design support 2021-04-30
SOT8002-1 3D model for products with SOT8002-1 package Design support 2021-01-28
SOT8002-1 plastic thermal enhanced surface mounted package; mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body Package information 2023-05-22

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
SOT8002_1 3D model for products with SOT8002-1 package Design support 2021-04-30
SOT8002-1 3D model for products with SOT8002-1 package Design support 2021-01-28

訂購、定價與供貨

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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