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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMZ350XN

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Saves PCB space due to small footprint (90 % smaller than SOT23)
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use in compact designs due to low profile (55 % lower than SOT23)

Applications

  • Driver circuits
  • Switching in portable appliances

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZ350XN SOT883 DFN1006-3 End of life N 1 30 12 420 650 150 1.87 0.18 0.65 2.5 1 N 37 8.6 2011-01-24

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMZ350XN PMZ350XN,315
(934060154315)
Obsolete Z6 N/A N/A SOT883
DFN1006-3
(SOT883)
SOT883 REFLOW_BG-BD-1
SOT883_315

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMZ350XN PMZ350XN,315 PMZ350XN rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (16)

文件名稱 標(biāo)題 類型 日期
PMZ350XN N-channel TrenchMOS standard level FET Data sheet 2008-02-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZ350XN_10_08_2011 PMZ350XN_10_08_2011 Spice parameter SPICE model 2011-09-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PMZ350XN_10_08_2011 PMZ350XN_10_08_2011 Spice parameter SPICE model 2011-09-13
SOT883 3D model for products with SOT883 package Design support 2020-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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