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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PESD16VX1UL

Ultra low capacitance unidirectional ESD protection diode

Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Unidirectional ESD protection of one line
  • Ultra low diode capacitance: Cd = 0.83 pF
  • Low ESD clamping voltage: 40 V at 30 ns and ±8 kV
  • Very low leakage current: IRM < 10 nA
  • ESD protection up to 8 kV
  • IEC 61000-4-2; level 4 (ESD)
  • AEC-Q101 qualified

Applications

  • 10/100/1000 Mbit/s Ethernet
  • FireWire
  • High-speed data lines
  • Subscriber Identity Module (SIM) card protection
  • Cellular handsets and accessories
  • Portable electronics
  • Communication systems
  • Computers and peripherals
  • Audio and video equipment
  • Antenna protection

文檔 (1)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
PESD16VX1UL PESD16VX1UL SPICE model SPICE model 2025-04-07

支持

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
PESD16VX1UL PESD16VX1UL SPICE model SPICE model 2025-04-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.