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Click here for more information50 V, 3 A PNP low VCEsat transistor
PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4350X
SOT89 (SC-62) package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements
AEC-Q101 qualified
Power management
DC/DC converters
Supply line switching
Battery charger
LCD backlighting
Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | fT [min] (MHz) | RCEsat@IC [typ] (mΩ) | RCEsat@IC [max] (mΩ) | VCEsat [max] (mV) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5350X | SOT89 | SOT89 | 4.5 x 2.5 x 1.5 | PNP | 1600.0 | -50.0 | -3.0 | -5.0 | 200.0 | 100.0 | 90.0 | 135.0 | -390.0 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5350X | PBSS5350X,115 (934055948115) |
Active | S46 |
(SOT89) |
SOT89 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT89_115 |
| PBSS5350X,135 (934055948135) |
Active | S46 | SOT89_135 | ||||
| PBSS5350X,146 (934055948146) |
Active | S46 | SOT89_146 | ||||
| PBSS5350X,147 (934055948147) |
Active | S46 | SOT89_147 |
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5350X | PBSS5350X,115 | PBSS5350X |
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| PBSS5350X | PBSS5350X,135 | PBSS5350X |
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| PBSS5350X | PBSS5350X,146 | PBSS5350X |
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| PBSS5350X | PBSS5350X,147 | PBSS5350X |
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| 文件名稱(chēng) | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| PBSS5350X | 50 V, 3 A PNP low VCEsat transistor | Data sheet | 2022-05-16 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| PBSS4021NX | 20 V, 7 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| PBSS4041NX | 60 V, 6.2 A NPN low VCEsat transistor | Data sheet | 2025-01-16 |
| SOT89 | 3D model for products with SOT89 package | Design support | 2018-12-05 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT89_mk | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Marcom graphics | 2017-01-28 |
| SOT89 | plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5 mm x 2.5 mm x 1.5 mm body | Package information | 2024-11-12 |
| SOT89_115 | Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2025-01-16 |
| SOT89_135 | Reel pack for SMD; 13"; Q2/T3 product orientation | Packing information | 2025-01-16 |
| SOT89_146 | Reel pack for SMD; 7"; Q1/T1 product orientation | Packing information | 2025-01-20 |
| SOT89_147 | Reel pack for SMD; 7"; Q4/T2 product orientation | Packing information | 2025-01-20 |
| PBSS5350X_Nexperia_Product_Reliability | PBSS5350X Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5350X | PBSS5350X SPICE model | SPICE model | 2024-08-27 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| PBSS5350X | PBSS5350X,115 | 934055948115 | Active | SOT89_115 | 1,000 | 訂單產(chǎn)品 |
| PBSS5350X | PBSS5350X,135 | 934055948135 | Active | SOT89_135 | 4,000 | 訂單產(chǎn)品 |
| PBSS5350X | PBSS5350X,146 | 934055948146 | Active | SOT89_146 | 1,000 | 訂單產(chǎn)品 |
| PBSS5350X | PBSS5350X,147 | 934055948147 | Active | SOT89_147 | 1,000 | 訂單產(chǎn)品 |
作為 Nexperia 的客戶，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
50 V, 3 A PNP low VCEsat transistor
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