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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認證產(chǎn)品(AEC-Q100/Q101)

NGW60T65M3DFP

The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard?-?switching 650 V, 60 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.

Features

  • Device current is rated at 60 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • 5 μs short circuit withstand time

  • HV-H3TRB qualified

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Induction heating

  • Welding

參數(shù)類型

型號 Product status VCE [max] (V) IC [typ] (A) Configuration tsc [max] (μs) Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW60T65M3DFP Production 650 60 MS 5 -40 175 SOT429-2 TO-247-3L

封裝

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
NGW60T65M3DFP NGW60T65M3DFPQ
(934668960127)
Active W60T65M3DFP SOT429-2
TO-247-3L
(SOT429-2)
SOT429-2 SOT429-2_127

環(huán)境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
NGW60T65M3DFP NGW60T65M3DFPQ NGW60T65M3DFP rohs rhf
品質(zhì)及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
NGW60T65M3DFP 650 V, 60 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-01-17
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03
NGW60T65M3DFP_L1 NGW60T65M3DFP SPICE model SPICE model 2024-12-06

支持

如果您需要設(shè)計/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。

模型

文件名稱 標題 類型 日期
NGW60T65M3DFP_L1 NGW60T65M3DFP SPICE model SPICE model 2024-12-06

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態(tài) 包裝 Packing Quantity 在線購買
NGW60T65M3DFP NGW60T65M3DFPQ 934668960127 Active SOT429-2_127 450 訂單產(chǎn)品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經(jīng)銷商處購買
NGW60T65M3DFP NGW60T65M3DFPQ 934668960127 SOT429-2 訂單產(chǎn)品
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