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Click here for more informationBUK9E4R9-60E
N-channel TrenchMOS logic level FET
Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
- AEC-Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
Applications
- 12 V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
參數(shù)類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9E4R9-60E | SOT226 | I2PAK | End of life | N | 1 | 60 | 4.5 | 4.9 | 175 | 100 | 20.3 | 234 | 56 | 1.7 | Y | 7282 | 607 | 2012-09-19 |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| BUK9E4R9-60E | BUK9E4R9-60E,127 (934066657127) |
Obsolete | BUK9E4R9 60E P**XXYY AZ Batch No |
I2PAK (SOT226) |
SOT226 | 暫無信息 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| BUK9E4R9-60E | BUK9E4R9-60E,127 | BUK9E4R9-60E |
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Series
文檔 (19)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9E4R9-60E | N-channel TrenchMOS logic level FET | Data sheet | 2012-10-05 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2021-05-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT226 | plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2020-04-21 |
| BUK9E4R9-60E | BUK9E4R9-60E Spice model | SPICE model | 2012-10-19 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| BUK9E4R9-60E_RC_Thermal_Model | BUK9E4R9-60E Thermal design model | Thermal design | 2021-01-18 |
| BUK9E4R9-60E | BUK9E4R9-60E Thermal model | Thermal model | 2012-10-08 |
支持
如果您需要設(shè)計/技術(shù)支持，請告知我們并填寫 應(yīng)答表 我們會盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| BUK9E4R9-60E | BUK9E4R9-60E Spice model | SPICE model | 2012-10-19 |
| BUK9E4R9-60E_RC_Thermal_Model | BUK9E4R9-60E Thermal design model | Thermal design | 2021-01-18 |
| BUK9E4R9-60E | BUK9E4R9-60E Thermal model | Thermal model | 2012-10-08 |
| SOT226 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BUK9E4R9-60E
N-channel TrenchMOS logic level FET
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