可訂購(gòu)部件
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 訂購(gòu)代碼(12NC) | 封裝 | 從經(jīng)銷(xiāo)商處購(gòu)買(mǎi) |
|---|---|---|---|---|
| BSP220 | BSP220,115 | 934000490115 | SOT223 | 訂單產(chǎn)品 |
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Click here for more informationBSP220
P-channel vertical D-MOS intermediate level FET
P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package.
不建議用在新設(shè)計(jì)中(NRND)。
Features and benefits
Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.
Very fast switching
No secondary breakdown
Applications
High-speed line drivers
Line transformer drivers
Relay drivers
參數(shù)類(lèi)型
| 型號(hào) | Package version | Package name | Product status | Channel type | VDS [max] (V) | Ptot [max] (W) | Release date |
|---|---|---|---|---|---|---|---|
|
BSP220
|
SOT223 | SC-73 | Not for design in | P | -200 | 1.5 | 2011-01-24 |
封裝
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
|
BSP220
|
BSP220,115 (934000490115) |
Active | BSP220 |
SC-73 (SOT223) |
SOT223 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT223_115 |
環(huán)境信息
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
|
BSP220
|
BSP220,115 | BSP220 |
|
|
文檔 (18)
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| BSP220_CNV | P-channel enhancement mode vertical D-MOS transistor | Data sheet | 1995-03-31 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SC-73_SOT223_mk | plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Marcom graphics | 2017-01-28 |
| SOT223 | plastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body | Package information | 2022-05-30 |
| SOT223_115 | SC-73; Reel pack for SMD, 7"; Q3/T4 product orientation | Packing information | 2024-02-15 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| BSP220_20_03_2012 | BSP220.20_03_2012 Spice parameter | SPICE model | 2012-04-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。
模型
| 文件名稱 | 標(biāo)題 | 類(lèi)型 | 日期 |
|---|---|---|---|
| BSP220_20_03_2012 | BSP220.20_03_2012 Spice parameter | SPICE model | 2012-04-13 |
| SOT223 | 3D model for products with SOT223 package | Design support | 2019-01-22 |
訂購(gòu)、定價(jià)與供貨
| 型號(hào) | Orderable part number | Ordering code (12NC) | 狀態(tài) | 包裝 | Packing Quantity | 在線購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|
| BSP220 | BSP220,115 | 934000490115 | Active | SOT223_115 | 1,000 | 訂單產(chǎn)品 |
樣品
作為 Nexperia 的客戶，您可以通過(guò)我們的銷(xiāo)售機(jī)構(gòu)訂購(gòu)樣品。
如果您沒(méi)有 Nexperia 的直接賬戶，我們的全球和地區(qū)分銷(xiāo)商網(wǎng)絡(luò)可為您提供 Nexperia 樣品支持。查看官方經(jīng)銷(xiāo)商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BSP220
P-channel vertical D-MOS intermediate level FET
從安世半導(dǎo)體購(gòu)買(mǎi)
| SKU | 庫(kù)存* | MOQ | 單位價(jià)格 | 數(shù)量 |
|---|