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Click here for more information74LVTN16244BBX
3.3 V 16-bit buffer/driver; 3-state
The 74LVTN16244B is a high-performance BiCMOS product designed for VCC operation at 3.3 V.
This device is a 16-bit buffer and line driver featuring non-inverting 3-state bus outputs. The device can be used as four 4-bit buffers, two 8-bit buffers, or one 16-bit buffer.
Features and benefits
16-bit bus interface
3-state buffers
Output capability: +64 mA and -32 mA
TTL input and output switching levels
Input and output interface capability to systems at 5 V supply
Power-up 3-state
Live insertion and extraction permitted
No bus current loading when output is tied to 5 V bus
Latch-up protection
JESD78B Class II exceeds 500 mA
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C
參數(shù)類型
| 型號 | Package name |
|---|---|
| 74LVTN16244BBX | HXQFN60U |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVTN16244BBX | 74LVTN16244BBX,518 (935295882518) |
Obsolete | LVTN16244B Standard Procedure Standard Procedure | no package information | |||
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVTN16244BBX | 74LVTN16244BBX,518 | 74LVTN16244BBX |
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Series
文檔 (2)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVTN16244B | 3.3 V 16-bit buffer/driver; 3-state | Data sheet | 2024-07-08 |
| lvtn16244b | 74LVTN16244B IBIS Model | IBIS model | 2014-08-12 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| lvtn16244b | 74LVTN16244B IBIS Model | IBIS model | 2014-08-12 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.