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Click here for more information74LVC3GU04GM
Triple unbuffered inverter
The 74LVC3GU04 is a triple unbuffered inverter.
Inputs can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment.
Alternatives
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
Overvoltage tolerant inputs to 5.5 V
High noise immunity
±24 mA output drive at VCC = 3.0 V
CMOS low power consumption
Latch-up performance exceeds 250 mA
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and from -40 °C to +125 °C.
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| 74LVC3GU04GM | 74LVC3GU04GM,115 (935277299115) |
Obsolete | no package information | ||||
| 74LVC3GU04GM,125 (935277299125) |
Obsolete | ||||||
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| 74LVC3GU04GM | 74LVC3GU04GM,115 | 74LVC3GU04GM |
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| 74LVC3GU04GM | 74LVC3GU04GM,125 | 74LVC3GU04GM |
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Series
文檔 (4)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| 74LVC3GU04 | Triple unbuffered inverter | Data sheet | 2023-08-29 |
| AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
| AN11009 | Pin FMEA for LVC family | Application note | 2019-01-09 |
| lvc3gu04 | 74LVC3GU04 IBIS model | IBIS model | 2015-01-15 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| lvc3gu04 | 74LVC3GU04 IBIS model | IBIS model | 2015-01-15 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.