亚洲成人免费一区二区三区-国产午夜精品美女视频-国产熟女一区二区免费视频-日韩人妻精品久久免费

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74LVC1G99GD

Ultra-configurable multiple function gate; 3-state

The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with 3-state output. The device can be configured as one of several logic functions including, AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components are required to configure the device as all inputs can be connected directly to VCC or GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE causes the output (Y) to assume a high?-?impedance OFF-state. When OE is LOW, the output state is determined by the signals applied to the Schmitt trigger inputs (A, B, C and D).

Due to the use of Schmitt trigger inputs the device is tolerant of slowly changing input signals, transforming them into sharply defined, jitter free output signals. By eliminating leakage current paths to VCC and GND, the inputs and disabled output are also over-voltage tolerant, making the device suitable for mixed-voltage applications.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • 5 V tolerant inputs for interfacing with 5 V logic

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Inputs accept voltages up to 5 V

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

參數(shù)類型

型號 Package name
74LVC1G99GD XSON8

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC1G99GD 74LVC1G99GD,125
(935291883125)
Obsolete V99 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVC1G99GD 74LVC1G99GD,125 74LVC1G99GD rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
74LVC1G99 Ultra-configurable multiple function gate; 3-state Data sheet 2024-08-12
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc1g99 74LVC1G99 IBIS model IBIS model 2014-10-20
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
lvc1g99 74LVC1G99 IBIS model IBIS model 2014-10-20

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

沧州市| 舒兰市| 瑞安市| 永顺县| 景宁| 彰化县| 应用必备| 开鲁县| 四子王旗| 鹤岗市| 海伦市| 东辽县| 清水河县| 洮南市| 航空| 城固县| 荣昌县| 临颍县| 望奎县| 贡山| 独山县| 襄城县| 牙克石市| 肃南| 崇左市| 海宁市| 阿瓦提县| 安化县| 太原市| 云南省| 萝北县| 蒲城县| 响水县| 府谷县| 姜堰市| 治多县| 永定县| 米脂县| 富阳市| 犍为县| 五峰|