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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AVCH16T245EV

16-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVCH16T245 is a 16-bit transceiver with bidirectional level voltage translation and 3-state outputs. The device can be used as two 8-bit transceivers or as a 16-bit transceiver. It has dual supplies (VCC(A) and VCC(B)) for voltage translation and four 8-bit input-output ports (nAn, nBn) each with its own output enable (nOE) and send/receive (nDIR) input for direction control. VCC(A) and VCC(B) can be independently supplied at any voltage between 0.8 V and 3.6 V making the device suitable for low voltage translation between any of the following voltages: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V. A HIGH on nDIR selects transmission from nAn to nBn while a LOW on nDIR selects transmission from nBn to nAn. A HIGH on nOE causes the outputs to assume a high?-?impedance OFF-state

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B outputs are in the high-impedance OFF-state. The bus-hold circuitry on the powered-up side always stays active.

The 74AVCH16T245 has active bus hold circuitry which is provided to hold unused or floating data inputs at a valid logic level. This feature eliminates the need for external pull-up or pull-down resistors.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range: VCC(A): 0.8 V to 3.6 V and VCC(B): 0.8 V to 3.6 V

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Maximum data rates:

    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 3.3 V translation)

    • 200 Mbit/s (≥ 1.1 V to 2.5 V translation)

    • 200 Mbit/s (≥ 1.1 V to 1.8 V translation)

    • 150 Mbit/s (≥ 1.1 V to 1.5 V translation)

    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

  • Suspend mode

  • Bus hold on data inputs

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 Package name
74AVCH16T245EV VFBGA56

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AVCH16T245EV 74AVCH16T245EV,518
(935288139518)
Obsolete AVCH16T245 Standard Procedure Standard Procedure no package information
74AVCH16T245EV,551
(935288139551)
Obsolete AVCH16T245 Standard Procedure Standard Procedure
74AVCH16T245EV,557
(935288139557)
Obsolete AVCH16T245 Standard Procedure Standard Procedure

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74AVCH16T245EV 74AVCH16T245EV,518 74AVCH16T245EV rhf
74AVCH16T245EV 74AVCH16T245EV,551 74AVCH16T245EV rhf
74AVCH16T245EV 74AVCH16T245EV,557 74AVCH16T245EV rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (3)

文件名稱 標(biāo)題 類型 日期
74AVCH16T245 16-bit dual supply translating transceiver with configurable voltage translation; 3?-?state Data sheet 2024-06-25
AN90007 Pin FMEA for AVC family Application note 2018-11-30
avch16t245 74AVCH16T245 Ibis model IBIS model 2014-10-14

支持

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模型

文件名稱 標(biāo)題 類型 日期
avch16t245 74AVCH16T245 Ibis model IBIS model 2014-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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