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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AVC2T45GF

Dual-bit, dual-supply voltage level translator/transceiver; 3-state

The 74AVC2T45 is a dual-bit, dual-supply transceiver that enables bidirectional level translation. It features two data input-output ports (nA and nB), a direction control input (DIR) and dual?-?supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nA and DIR are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In Suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B are in the high-impedance OFF-state.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 0.8 V to 3.6 V

    • VCC(B): 0.8 V to 3.6 V

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Maximum data rates:

    • 500 Mbit/s (1.8 V to 3.3 V translation)

    • 320 Mbit/s (<1.8 V to 3.3 V translation)

    • 320 Mbit/s (translate to 2.5 V or 1.8 V)

    • 280 Mbit/s (translate to 1.5 V)

    • 240 Mbit/s (translate to 1.2 V)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 Package name
74AVC2T45GF XSON8

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AVC2T45GF 74AVC2T45GF,115
(935291497115)
Withdrawn / End-of-life SOT1089
XSON8
(SOT1089)
SOT1089 REFLOW_BG-BD-1
SOT1089_115

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AVC2T45GF 74AVC2T45GF,115 74AVC2T45GF rohs rhf rhf
品質及可靠性免責聲明

文檔 (11)

文件名稱 標題 類型 日期
74AVC2T45 Dual-bit, dual-supply voltage level translator/transceiver; 3?-?state Data sheet 2024-08-12
AN90007 Pin FMEA for AVC family Application note 2018-11-30
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07
avc2t45 74AVC2T45 IBIS model IBIS model 2022-12-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XSON8_SOT1089_mk plastic, extremely thin small outline package; no leads; 8 terminals; 0.55 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT1089 plastic, leadless extremely thin small outline package; 8 terminals; 0.35 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Package information 2022-06-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1089 MAR_SOT1089 Topmark Top marking 2013-06-03

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模型

文件名稱 標題 類型 日期
avc2t45 74AVC2T45 IBIS model IBIS model 2022-12-22
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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