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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

2PC4617R

NPN general-purpose transistor

NPN transistor in a SOT416 (SC-75) plastic package. The PNP complement is 2PA1774.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Low current (max. 150 mA)
  • Low voltage (max. 50 V)
  • AEC-Q101 qualified

Applications

  • General-purpose switching and amplification in communication, Electronic Data Processing (EDP) and consumer applications.

參數(shù)類型

型號(hào) Package version Package name Size (mm)
2PC4617R SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
2PC4617R 2PC4617R,115
(934043530115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115
2PC4617R,135
(934043530135)
Obsolete SOT416_135
2PC4617R/DG,115
(934061908115)
Obsolete SOT416_115
2PC4617R/A2,115
(934063168115)
Obsolete SOT416_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
2PC4617R 2PC4617R,115 2PC4617R rohs rhf rhf
2PC4617R 2PC4617R,135 2PC4617R rohs rhf rhf
2PC4617R 2PC4617R/DG,115 2PC4617R rohs rhf rhf
2PC4617R 2PC4617R/A2,115 2PC4617R rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

Series

文檔 (5)

文件名稱 標(biāo)題 類型 日期
2PC4617 NPN general-purpose transistor Data sheet 2009-12-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2025-01-31
2PC4617R 2PC4617R SPICE model SPICE model 2024-08-27

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
2PC4617R 2PC4617R SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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